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| BUZ 172 SIPMOS (R) Power Transistor * P channel * Enhancement mode * Avalanche rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 172 VDS -100 V ID -5.5 A RDS(on) 0.6 Package TO-220 AB Ordering Code C67078-S1451-A2 Maximum Ratings Parameter Continuous drain current Symbol Values -5.5 Unit A ID IDpuls -22 TC = 37 C Pulsed drain current TC = 25 C Avalanche energy, single pulse EAS 170 mJ ID = -5.5 A, VDD = -25 V, RGS = 25 L = 8.4 mH, Tj = 25 C Gate source voltage Power dissipation VGS Ptot 20 40 V W TC = 25 C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJA -55 ... + 150 -55 ... + 150 3.1 75 E 55 / 150 / 56 C K/W Semiconductor Group 1 07/96 BUZ 172 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS -100 -3 -0.1 -10 -10 0.4 -4 V VGS = 0 V, ID = -0.25 mA, Tj = 25 C Gate threshold voltage VGS(th) -2.1 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS -1 -100 A VDS = -100 V, VGS = 0 V, Tj = 25 C VDS = -100 V, VGS = 0 V, Tj = 125 C Gate-source leakage current IGSS -100 nA 0.6 VGS = -20 V, VDS = 0 V Drain-Source on-resistance RDS(on) VGS = -10 V, ID = -3.7 A Semiconductor Group 2 07/96 BUZ 172 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit gfs 1 2 800 220 90 - S pF 1200 330 140 ns 20 30 VDS 2 * ID * RDS(on)max, ID = -3.7 A Input capacitance Ciss Coss - VGS = 0 V, VDS = -25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = -25 V, f = 1 MHz Reverse transfer capacitance Crss - VGS = 0 V, VDS = -25 V, f = 1 MHz Turn-on delay time td(on) VDD = -30 V, VGS = -10 V, ID = -2.8 A RGS = 50 Rise time tr 120 180 VDD = -30 V, VGS = -10 V, ID = -2.8 A RGS = 50 Turn-off delay time td(off) 70 90 VDD = -30 V, VGS = -10 V, ID = -2.8 A RGS = 50 Fall time tf 55 75 VDD = -30 V, VGS = -10 V, ID = -2.8 A RGS = 50 Semiconductor Group 3 07/96 BUZ 172 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Reverse Diode Inverse diode continuous forward current IS TC = 25 C Inverse diode direct current,pulsed A -1 200 0.75 -5.5 -22 V -1.3 ns C Values typ. max. Unit ISM VSD trr Qrr TC = 25 C Inverse diode forward voltage VGS = 0 V, IF = -11 A Reverse recovery time VR = -30 V, IF=lS, diF/dt = 100 A/s Reverse recovery charge VR = -30 V, IF=lS, diF/dt = 100 A/s Semiconductor Group 4 07/96 BUZ 172 Power dissipation Ptot = (TC) Drain current ID = (TC) parameter: VGS -10 V -6.0 A -5.0 45 W Ptot 35 30 25 20 15 10 5 0 0 ID -4.5 -4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0 20 40 60 80 100 120 C 160 0 20 40 60 80 100 120 C 160 TC TC Safe operating area ID = (VDS) parameter: D = 0.01, TC = 25C -10 2 Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 1 K/W A ID -10 1 t = 25.0s p 100 s ZthJC 10 0 = V DS / I D 1 ms DS (o n) 10 -1 D = 0.50 0.20 10 ms R -10 0 0.10 10 -2 DC single pulse 0.05 0.02 0.01 -10 -1 0 -10 -10 1 V -10 2 10 -3 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 VDS tp Semiconductor Group 5 07/96 BUZ 172 Typ. output characteristics ID = (VDS) parameter: tp = 80 s -13 A l k VGS [V] j a -4.0 b c d -4.5 -5.0 -5.5 -6.0 -6.5 -7.0 -7.5 -8.0 -9.0 Typ. drain-source on-resistance RDS (on) = (ID) parameter: VGS 1.8 a b c d e f g Ptot = 40W RDS (on) 1.4 1.2 1.0 0.8 0.6 0.4 d c a b -11 ID -10 -9 -8 -7 -6 -5 -4 g i e f g hh i j k -10.0 h i f l -20.0 -3 -2 -1 0 0 -2 -4 -6 -8 e 0.2 0.0 -11 0 VGS [V] = a b c d e f -5.0 -4.5 -4.0 -6.0 -6.5 -7.0 -7.5 -8.0 -5.5 g h i -9.0 -10.0-20.0 V -2 -4 -6 -8 A -12 VDS ID Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 s VDS2 x ID x RDS(on)max -14 A -12 parameter: tp = 80 s, VDS2 x ID x RDS(on)max 3.2 S ID -11 -10 -9 -8 -7 -6 -5 -4 gfs 2.4 2.0 1.6 1.2 0.8 -3 -2 -1 0 0 0.4 0.0 -1 -2 -3 -4 -5 -6 -7 -8 V -10 0 -2 -4 -6 -8 VGS A ID -12 Semiconductor Group 6 07/96 BUZ 172 Drain-source on-resistance RDS (on) = (Tj ) parameter: ID = -3.7 A, VGS = -10 V 1.7 Gate threshold voltage VGS (th) = (Tj) parameter: VGS = VDS, ID = 1 mA -4.6 V -4.0 RDS (on) 1.4 1.2 1.0 98% VGS(th) -3.6 -3.2 -2.8 -2.4 typ 0.8 0.6 98% -2.0 2% typ -1.6 -1.2 -0.8 0.4 0.2 -0.4 0.0 -60 -20 20 60 100 C 160 0.0 -60 -20 20 60 100 C 160 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 1 Forward characteristics of reverse diode IF = (VSD) parameter: Tj , tp = 80 s -10 2 C nF 10 0 A IF -10 1 Ciss Coss 10 -1 -10 0 Crss Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 -2 0 -5 -10 -15 -20 -25 -30 V VDS -40 -10 -1 0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 V -3.0 VSD Semiconductor Group 7 07/96 BUZ 172 Avalanche energy EAS = (Tj ) parameter: ID = -5.5 A, VDD = -25 V RGS = 25 , L = 8.4 mH 180 mJ Drain-source breakdown voltage V(BR)DSS = (Tj) -120 V EAS 140 120 100 80 60 40 20 0 20 V(BR)DSS -114 -112 -110 -108 -106 -104 -102 -100 -98 -96 -94 -92 -90 -60 40 60 80 100 120 C 160 -20 20 60 100 C 160 Tj Tj Semiconductor Group 8 07/96 BUZ 172 Package Outlines TO-220 AB Dimension in mm Semiconductor Group 9 07/96 |
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